Calculations of the electronic mobility and drift velocity have been carried out for bulk GaN and AlGaN-GaN heterojunctions based on a Monte Carlo approach. The bulk calculations were intended to serve as a validity check of the simulation model and yielded a set of best-fit transport parameters. Wurtzite GaN has been shown to have superior steady state drift velocity characteristics over both GaAs and the zinc blende phase of GaN. Electron mobility in HFET structures has ben analyzed taking account of polarization effects, degeneracy and interface roughness scattering. Degeneracy is shown to play an important role, especially at large gate bias values. Very good agreement with available experiments has been obtained. Our results underscored the dominance of interface roughness scattering, and demonstrated that a parameterized model based on a weak- perturbation, Born approximation theory can yield sufficiently accurate results.

Date Published: 28 March 2000
PDF: 15 pages
Proc. SPIE 3940, Ultrafast Phenomena in Semiconductors IV, (28 March 2000); doi: 10.1117/12.381451

Published in SPIE Proceedings Vol. 3940:
Ultrafast Phenomena in Semiconductors IV
Kong-Thon F. Tsen; Jin-Joo Song, Editor(s)