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Proceedings Paper

Multiple-quantum-well GaAs/AlGaAs in-line fiber intensity modulator
Author(s): Erji Mao; Diego R. Yankelevich; Christopher W. Coldren; Olav Solgaard; Andre Knoesen; James S. Harris Jr.
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Paper Abstract

We demonstrate a GaAs/AlGaAs multiple-quantum-well in-line fiber optic intensity modulator. Based on evanescent wave coupling between a GaAs/AlGaAs anti-resonant reflective optical waveguide and a side-polished single mode fiber, this device concept combines the inherent advantages of in- line fiber devices with high-performance GaAs integrated optoelectronics. The GaAs waveguide utilizes distributed Bragg reflector mirrors, which are designed to provide maximum reflection at a given more angle, to phase-match to the low-index fiber. Intensity modulation of the transmitted light through the fiber is achieved by changing the complex propagation constant of the GaAs waveguide through the quantum-confined Stark effect. Typical device shows an on/off ratio of 4:1, with an applied voltage of 9V. Calculations show that with a longer interaction region, an on/off ratio of more than 40dB is achievable with the same applied voltage.

Paper Details

Date Published: 24 March 2000
PDF: 8 pages
Proc. SPIE 3936, Integrated Optics Devices IV, (24 March 2000);
Show Author Affiliations
Erji Mao, Stanford Univ. (United States)
Diego R. Yankelevich, Univ. of California/Davis (United States)
Christopher W. Coldren, Stanford Univ. (United States)
Olav Solgaard, Stanford Univ. (United States)
Andre Knoesen, Univ. of California/Davis (United States)
James S. Harris Jr., Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 3936:
Integrated Optics Devices IV
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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