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Proceedings Paper

Fabrication of high-aspect ratio photonic bandgap structures on silicon-on-insulator
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Paper Abstract

Silicon-on-Insulator (SOI) is an attractive platform for fabrication of photonic bandgap devices. The large refractive index step between the silicon waveguide and the SiO2 lower cladding layer permits realization of periodic waveguides with very large index modulation. The large refractive index modulation is obtained by deep anisotropic etching into the silicon guide region, and makes it possible to obtain strong resonances in compact periodic structures with only a few periods. In addition, the processing of these structures is highly compatible with standard silicon CMOS processing. Hence this technology is attractive for low cost, highly integrated photonic and optoelectronic circuits.

Paper Details

Date Published: 24 March 2000
PDF: 7 pages
Proc. SPIE 3936, Integrated Optics Devices IV, (24 March 2000); doi: 10.1117/12.379955
Show Author Affiliations
Mikhail N. Naydenkov, Cognet Microsystems (United States)
Bahram Jalali, Univ. of California/Los Angeles (United States)

Published in SPIE Proceedings Vol. 3936:
Integrated Optics Devices IV
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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