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Proceedings Paper

Smooth and anisotropic ion beam etching of InP with Ar/H2 chemistry
Author(s): Bulent Cakmak; Siyuan Yu; Richard V. Penty; Ian H. White
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Paper Abstract

Ion beam etching (IBE) and chemically assisted ion-beam etching (CAIBE) of InP wafers are studied. While Argon alone is used for the IBE process, the CAIBE is carried out by using Ar/H2CH4. The realization of CAIBE in Ar/H2 atmosphere is also achieved for the first time. The evolution of the surface roughness and morphology is presented comparatively by varying acceleration voltage (Vacc), discharge current (Idis) and ion incidence angle. A drastic improvement of the surface roughness is obtained for the CAIBE using Ar/H2 chemistry. The etch rate of the InP structures is studied as a function of the Idis and the Vacc. A maximum etch rate of 700 angstrom/min is observed for 1.75kV acceleration voltage and 45 mA discharge current at 30 degrees ion incidence angle. The variation of the etch rate against the ion incidence angle is investigated both theoretically and experimentally. A good agreement between those is observed. Finally, the anisotropy of InP samples is presented for two different masks; Al2O3 and Titanium in the case of CAIBE mode. The most anisotropic structure of 83 degrees is performed by using the Ti mask.

Paper Details

Date Published: 24 March 2000
PDF: 8 pages
Proc. SPIE 3936, Integrated Optics Devices IV, (24 March 2000); doi: 10.1117/12.379944
Show Author Affiliations
Bulent Cakmak, Univ. of Bristol (Turkey)
Siyuan Yu, Univ. of Bristol (United Kingdom)
Richard V. Penty, Univ. of Bristol (United Kingdom)
Ian H. White, Univ. of Bristol (United Kingdom)

Published in SPIE Proceedings Vol. 3936:
Integrated Optics Devices IV
Giancarlo C. Righini; Seppo Honkanen, Editor(s)

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