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Proceedings Paper

Tunneling-induced electroluminescence from metal-oxide-semiconductor structure on silicon
Author(s): Ching-Fuh Lin; Cheewee Liu; Miin-Jang Chen; Ming-Hung Lee; I-Cheng Lin
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Paper Abstract

Silicon is the most important semiconductor material for electronics industry. However, its indirect bandgap makes it hardly emit light, so its applications in optoelectronics are limited. Many efforts had been devoted to converting silicon to light-emitting materials, including porous silicon-based devices, nanocrystalline Si, and so on. In this work, we report electroluminescence on silicon with simple metal-oxide-semiconductor (MOS) structure. The thin oxide is grown by well-controlled rapid thermal oxidation. With extremely thin oxide, significant tunneling current flows through the MOS structure as the metal is properly biased. The tunneled electrons could then occupy the upper energy levels more than the thermal-equilibrium situation. Then luminescence occurs when they have radiative transition to lower energy states. For low biased voltages, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For large applied voltages, the emission shifts to longer wavelengths and becomes voltage- dependent. MOS structures fabricated on both p-type and n- type silicon exhibit electroluminescence. This is significant because the fabrication of those MOS structures is compatible with CMOS electronics. Therefore, the MOS EL devices provide a particular advantage over other types of luminescence on silicon. The details of the electroluminescence and its physical reason are reported and discussed.

Paper Details

Date Published: 15 March 2000
PDF: 9 pages
Proc. SPIE 3953, Silicon-based Optoelectronics II, (15 March 2000); doi: 10.1117/12.379614
Show Author Affiliations
Ching-Fuh Lin, National Taiwan Univ. and Graduate Institute of Electro-Optical Engineering (Taiwan)
Cheewee Liu, National Taiwan Univ. (Taiwan)
Miin-Jang Chen, National Taiwan Univ. and Graduate Institute of Electro-Optical Engineering (Taiwan)
Ming-Hung Lee, National Taiwan Univ. (Taiwan)
I-Cheng Lin, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3953:
Silicon-based Optoelectronics II
David J. Robbins; Derek C. Houghton, Editor(s)

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