Share Email Print

Proceedings Paper

Laser processing of materials and structures for flat panel displays
Author(s): Oguz Yavas; Mikio Takai
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In a first experiment, different harmonics of the Nd:YLF laser, ranging from IR to UV wavelength region, were used for cleaning of Nb-gated silicon field emitter tips to improve the emission efficiency. An increase of the emission current by about 30 percent after laser irradiation was observed only in case of UV laser irradiation at (lambda) equals 349 nm, indicating contaminants were successfully removed from the tip surface and the cleaning process was strongly wavelength dependent. In a second set of experiments, the effect of ex-situ and in-situ deposition of diamond-like carbon (DLC) films on the field emitter arrays was studie. The thickness of the DLC film turns out to be a critical parameter for the improvement of the emission efficiency and stability. In a third set of experiments, maskless laser patterning of indium tin oxide films was studied. High process speeds in excess of 1 m/s could be achieved, making the process industrially viable. An essential requirement for residue-free patterning was found to be strong light absorption by the under-lying substrate.

Paper Details

Date Published: 25 February 2000
PDF: 10 pages
Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378188
Show Author Affiliations
Oguz Yavas, Osaka Univ. (Germany)
Mikio Takai, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 4070:
ALT '99 International Conference on Advanced Laser Technologies
Vladimir I. Pustovoy; Vitali I. Konov, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?