The XeCl laser facility Hercules, delivering a maximum energy of 8 J in 160 ns FWHM, has been used to irradiate amorphous silicon films on glass substrate. We designed an optical homogenizer to reshape the large cross-section of the laser beam (10 X 5) cm², in order to reach a fluence up to 0.5 J/cm² area. The beam resulted spatially homogeneous within 10 percent. We obtained poly- silicon films with grain size ranging from 0.1 to 2 micrometers , depending on the laser energy density. These preliminary results show that the grain size is critically fluence- dependent when the so-called super-lateral-growth regime is approached, with a maximum slope of the grain size vs. energy density greater than 0.5 micrometers /(mJ/cm²).

Date Published: 25 February 2000
PDF: 6 pages
Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378178

Published in SPIE Proceedings Vol. 4070:
ALT '99 International Conference on Advanced Laser Technologies
Vladimir I. Pustovoy; Vitali I. Konov, Editor(s)