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Proceedings Paper

Experimental results on silicon annealing by a long-pulse high-power XeCl laser system
Author(s): Daniele Murra; Sarah Bollanti; Francesca Bonfigli; D. Della Sala; Paolo Di Lazzaro; Tommaso Letardi
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Paper Abstract

The XeCl laser facility Hercules, delivering a maximum energy of 8 J in 160 ns FWHM, has been used to irradiate amorphous silicon films on glass substrate. We designed an optical homogenizer to reshape the large cross-section of the laser beam (10 X 5) cm2, in order to reach a fluence up to 0.5 J/cm2 area. The beam resulted spatially homogeneous within 10 percent. We obtained poly- silicon films with grain size ranging from 0.1 to 2 micrometers , depending on the laser energy density. These preliminary results show that the grain size is critically fluence- dependent when the so-called super-lateral-growth regime is approached, with a maximum slope of the grain size vs. energy density greater than 0.5 micrometers /(mJ/cm2).

Paper Details

Date Published: 25 February 2000
PDF: 6 pages
Proc. SPIE 4070, ALT '99 International Conference on Advanced Laser Technologies, (25 February 2000); doi: 10.1117/12.378178
Show Author Affiliations
Daniele Murra, ENEA (Italy)
Sarah Bollanti, ENEA (Italy)
Francesca Bonfigli, EL.EN SpA (Italy)
D. Della Sala, ENEA (Italy)
Paolo Di Lazzaro, ENEA (Italy)
Tommaso Letardi, ENEA (Italy)

Published in SPIE Proceedings Vol. 4070:
ALT '99 International Conference on Advanced Laser Technologies
Vladimir I. Pustovoy; Vitali I. Konov, Editor(s)

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