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Proceedings Paper

Raman scattering and anti-Stokes luminescence in wide-gap semiconductors
Author(s): Vladimir S. Gorelik; Alexandr L. Karuzskii; Yurii V. Klevkov; Alexander V. Kvit; Sergey A. Medvedev; Anatolii V. Perestoronin; Pavel P. Sverbil
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Paper Abstract

Raman scattering and anti-Stokes photoluminescence spectra of the crystalline GaP, ZnSe and ZnTe are investigated at room and liquid helium temperatures. The increase of quality-factor of vibrational modes and sharpening of polariton band are found in the Raman spectrum at liquid- helium temperature in a frequency range, corresponding to the TO and LO vibrations. A tentative explanation of the observed anti-Stokes photoluminescence is given with a help of the deep-level state analysis of these materials. The low-temperature anti-Stokes photoluminescence is found to be a common property of the wide gap semiconductors and can probe the spatial distribution profiles of impurities in these crystals.

Paper Details

Date Published: 18 February 2000
PDF: 11 pages
Proc. SPIE 4069, Raman Scattering, (18 February 2000); doi: 10.1117/12.378108
Show Author Affiliations
Vladimir S. Gorelik, P.N. Lebedev Physical Institute (Russia)
Alexandr L. Karuzskii, P.N. Lebedev Physical Institute (Russia)
Yurii V. Klevkov, P.N. Lebedev Physical Institute (Russia)
Alexander V. Kvit, P.N. Lebedev Physical Institute (United States)
Sergey A. Medvedev, P.N. Lebedev Physical Institute (Russia)
Anatolii V. Perestoronin, P.N. Lebedev Physical Institute (Russia)
Pavel P. Sverbil, P.N. Lebedev Physical Institute (Russia)

Published in SPIE Proceedings Vol. 4069:
Raman Scattering
Vladimir S. Gorelik; Anna D. Kudryavtseva, Editor(s)

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