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Proceedings Paper

Cluster tool for photomask inspection and qualification at 150-nm design rules and beyond
Author(s): Kai Peter; Volodymyr Ordynskyy; Christoph Dolainsky; Hans Hartmann; Hans-Juergen Brueck
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Paper Abstract

The reduction of the wave length in the optical lithography in combination with mask enhancement techniques like phase shift pattern, optical proximity correction (OPC) or off- axis illumination requires a rapid increase in measurement accuracy and cost effective qualification of advanced photo masks. The knowledge about the impact of CD deviations, loss of pattern fidelity--especially of OPC structures--and mask defects on wafer level in more and more essential for mask qualification.

Paper Details

Date Published: 3 February 2000
PDF: 3 pages
Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); doi: 10.1117/12.377100
Show Author Affiliations
Kai Peter, aiss GmbH (Germany)
Volodymyr Ordynskyy, aiss GmbH (Germany)
Christoph Dolainsky, aiss GmbH (Germany)
Hans Hartmann, aiss GmbH (Germany)
Hans-Juergen Brueck, MueTec GmbH (Germany)

Published in SPIE Proceedings Vol. 3996:
16th European Conference on Mask Technology for Integrated Circuits and Microcomponents
Uwe F. W. Behringer, Editor(s)

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