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Proceedings Paper

Experimental study of hydrogen-free DLC film deposition by XeCl (308 nm) pulsed laser ablation
Author(s): Tie-jun Li; Jingru Liu; Li-ge Wang
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Paper Abstract

In this work, hydrogen-free DLC (Diamond Like Carbon) films have been deposited by XeCl (308 nm) pulsed laser ablation of pure graphite target with the base pressure of 1 X 10-3 Pa at room temperature. The films obtained show remarkable properties similar to those of diamond. Raman spectroscopy analysis gave a broad Raman peak centered at 1523 cm-1, which indicated that the film had an amorphous structure. FTIR analysis showed that the film head a transmittance above 90% from 2.5 micrometers to 25 micrometers without any absorption peak. Microhardness test showed that the film had a mechanical hardness up to 23 GPa. The film also had chemical inertness in various acids and organic solutions. The effects of experimental parameters on the film properties have been investigated. The optimum dc bias of -500 V and the threshold of laser (308 nm) power density of 3 X 108 W/cm2 which is necessary to obtain DLC film have been observed. The emission spectra of laser induced plasma have been obtained to study the ionization state of particles in laser-induced plasma. Considering the experimental results, we suggest that the energy and ionicity of the particles in laser-induced plasma should be important factors in the formation of DLC film. Particles with higher energy and higher ionicity will result in DLC films with excellent properties.

Paper Details

Date Published: 1 February 2000
PDF: 8 pages
Proc. SPIE 3885, High-Power Laser Ablation II, (1 February 2000); doi: 10.1117/12.376977
Show Author Affiliations
Tie-jun Li, Northwest Institute of Nuclear Technology and Shanghai Institute of Optics and Fine Mechan (China)
Jingru Liu, Northwest Institute of Nuclear Technology (China)
Li-ge Wang, Northwest Institute of Nuclear Technology (China)

Published in SPIE Proceedings Vol. 3885:
High-Power Laser Ablation II
Claude R. Phipps; Masayuki Niino, Editor(s)

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