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Proceedings Paper

Silicon-based materials for optoelectronics: visible photoluminescence and electroluminescence from amorphous silicon
Author(s): Juraj Dian; Jan Valenta; A. Poruba; Pavel Horvath; Katerina Luterova; Petr Fojtik; Ivan Pelant
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Paper Abstract

Room temperature visible photoluminescence (PL) and electroluminescence (EL) of wide band gap hydrogenated amorphous silicon thin films prepared in SiH4 microwave plasma strongly diluted with He is reported. The emission spectra are peaked at approximately 1.5 eV. Films were characterized by means of optical and IR absorption and hydrogen thermal desorption. The band gap of a-Si:H films varies within the interval 2.0-2.2 eV. The strong evidence for two distinct types of PL processes is presented: one being linked with oligosilanes and the second one attributed to electron-hole recombination in tail states. EL has been investigated in p-i-n and p+-p-n-n+ structures with CrNi/ITO contacts. The EL occurs after initial forming in reverse bias only and its external quantum efficiency is approximately 10-5 percent. The shape and spectral position of EL spectra suggest that the light emission in this case is probably due to simultaneous excitation of the oligosilane units and impact ionization by hot electrons.

Paper Details

Date Published: 29 December 1999
PDF: 6 pages
Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373675
Show Author Affiliations
Juraj Dian, Charles Univ. (Czech Republic)
Jan Valenta, Charles Univ. (Czech Republic)
A. Poruba, Brno Univ. of Technology (Czech Republic)
Pavel Horvath, Brno Univ. of Technology (Czech Republic)
Katerina Luterova, Institute of Physics (Czech Republic)
Petr Fojtik, Institute of Physics (Czech Republic)
Ivan Pelant, Institute of Physics (Czech Republic)

Published in SPIE Proceedings Vol. 4016:
Photonics, Devices, and Systems
Miroslav Hrabovsky; Pavel Tomanek; Miroslav Miler, Editor(s)

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