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Proceedings Paper

Comparison of laser technology and RTA on Pt/Sn/Pd ohmic contacts to GaAs
Author(s): Jan Zlamal; Petr Machac; Vladimir Myslik
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Paper Abstract

In this paper we have studied the performance of Pt/Sn/Pd contact structures on n+)-GaAs plates. An absorbing cap layer is necessary to use in the case of a laser annealing. Pt layer deposited by sputtering with the thickness of 12 nm gives the best parameters. The semiconductors plates were cleaned prior the deposition of metallization by various solutions, the lowest contact resistance was obtained in the case of H2O2:NH4OH:H2O. The laser annealing was compared with RTA method, which was not suitable for this contact structure.

Paper Details

Date Published: 29 December 1999
PDF: 5 pages
Proc. SPIE 4016, Photonics, Devices, and Systems, (29 December 1999); doi: 10.1117/12.373647
Show Author Affiliations
Jan Zlamal, Institute of Chemical Technology (Czech Republic)
Petr Machac, Institute of Chemical Technology (Czech Republic)
Vladimir Myslik, Institute of Chemical Technology (Czech Republic)

Published in SPIE Proceedings Vol. 4016:
Photonics, Devices, and Systems
Miroslav Hrabovsky; Pavel Tomanek; Miroslav Miler, Editor(s)

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