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Proceedings Paper

Performance of the EL-4+ maskwriter for advanced chrome on glass reticles
Author(s): Neal Caldwell; Raymond Jeffer; Mark Lawliss; John G. Hartley
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Paper Abstract

The IBM EL-4+ maskmaker, installed in the Advanced Mask Facility in Burlington site has been undergoing extensive evaluation of its ability to fabricate advanced 4X chrome on glass (COG) reticles. In previous years on 1X x-ray masks, the EL-4+ maskmaker has demonstrated image placement of 20 nm 3(sigma) , minimum feature size to 100 nm, image size uniformity to below 10 nm while maintaining availability of 97% during the last 6 months of 1998. So far, in 1999, the EL- 4+ system has demonstrated minimum etched features to 100 nm in COG using ZEP7000 resist and dry etching. Promising results have also been achieved using a gate level 0.18 micrometer ground rule mask as a learning vehicle. COG learning is continuing, with indications that we should be able to achieve 35 nm image placement. There are a number of significant advantages to be realized in COG reticle fabrication on the EL-4+. Resolution, coupled with a 1/640 tool grid permits features to be patterned with sharp corners and precisely located edges without any impact on writing speed. An advanced proximity correction algorithm exploiting the systems dose modulation capabilities insures image fidelity across a wide spectrum of pattern density.

Paper Details

Date Published: 30 December 1999
PDF: 8 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373344
Show Author Affiliations
Neal Caldwell, IBM Microelectronics Div. (United States)
Raymond Jeffer, IBM Microelectronics Div. (United States)
Mark Lawliss, IBM Microelectronics Div. (United States)
John G. Hartley, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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