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Proceedings Paper

Definition of new quality criteria and assessment means for masks at 150-nm design rules and beyond
Author(s): Emanuele Baracchi; Hans-Juergen Brueck; Thomas Engel; Yair Eran; Frederic P. Lalanne; Olivier Maurin; Volodymyr Ordynskyy; Thomas Schaetz; Karl Sommer
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Paper Abstract

Low-k1 lithography requires enhancement techniques like phase shift and OPC. These techniques impose new and challenging specifications on photomasks. A development to establish means and methods to verify corner rounding, line end shortening, defect printability and the size of jogs, serifs and assist lines in a production worthy manner is based on the assessment of mask production data through a new cluster software tool which combines the output data of a mask defect inspection system, a CD metrology system, an AIMS based mask review station and printing simulation results. Possible definitions of new type photomask quality criteria are discussed and measurement procedures are proposed. As a key application the review of critical features on reticles (OPC, classical defects, contact printability, etc.) at changing stepper conditions ((lambda) , N.A., (sigma) ) is discussed. The concept and the development status of a Photomask Qualification Cluster is presented and early performance results are examined against the target values which are a defect detection sensitivity of 125 nm, optical resolution of 200 nm lines for assist line assessment, CD measurement on lines, contacts and OPC structures with 5 nm repeatability and mask pattern fidelity assessment at printing conditions down to 500 nm lines at reticle level.

Paper Details

Date Published: 30 December 1999
PDF: 11 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373312
Show Author Affiliations
Emanuele Baracchi, STMicroelectronics (Italy)
Hans-Juergen Brueck, MueTec GmbH (Germany)
Thomas Engel, Carl Zeiss Jena GmbH (Germany)
Yair Eran, Applied Materials Israel Ltd. (Israel)
Frederic P. Lalanne, CNET/SGS-Thompson (France)
Olivier Maurin, DuPont Photomasks France (France)
Volodymyr Ordynskyy, aiss GmbH (Germany)
Thomas Schaetz, Infineon Technologies AG (Germany)
Karl Sommer, Karl Sommer Consulting (Germany)

Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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