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Proceedings Paper

Dry etching technology of Cr films to produce fine-pattern reticles under 720 nm with ZEP-7000
Author(s): Hitoshi Handa; Satoshi Yamauchi; Kouji Hosono; Yutaka Miyahara
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Paper Abstract

Process optimizations have been done to produce 'Fine Pattern' reticles whose minimum target sizes are under 720 nm. 'Zero Bias' process for binary Cr reticles can be achieved with our dry etching process using ZEP-7000 blanks. MEBES-4500 exposure on resist films of 300 nm and dry etching with Magnetic Enhanced Reactive Ion Etching (MERIE) system are adopted. It is shown that adjusted develop condition weakens thinning effect of resist in sub-micron area due to proximity effect of exposure, and MERIE system with Gas Assist Etching (GAE) also improves pattern resolution. CD shift due to 'Loading Effect' is small and resist patterns are perfectly printed as Cr pattern with negligible deterioration of CD linearity. Much improved CD distribution in the area of 132 mm square can be obtained. In production of MoSiON-based attenuated-PSM (Att- PSM), CD shifts between Cr and MoSiON except OPC patterns (such as serif and scattering-bar) can be estimated about 30 nm. It is also shown that there are few defects after dry etching, and 'Zero Defect' reticles are obtained in most cases. Through the all results, validity and probability of our process to produce 'Fine Pattern Reticles' near the half- micron are discussed.

Paper Details

Date Published: 30 December 1999
PDF: 9 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373299
Show Author Affiliations
Hitoshi Handa, Fujitsu Ltd. (Japan)
Satoshi Yamauchi, Fujitsu Ltd. (Japan)
Kouji Hosono, Fujitsu Ltd. (Japan)
Yutaka Miyahara, Fujitsu Ltd. (Japan)

Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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