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Proceedings Paper

Practical applications of IDEAL exposure method
Author(s): Masanobu Hasegawa; Kenji Saitoh; Minoru Yoshii; Akiyoshi Suzuki
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Paper Abstract

IDEAL (Innovative Double Exposure by Advanced Lithography) has been introduced as a new double exposure technique to realize k1 equals 0.3 optical lithography. IDEAL uses a rough pattern mask with patterns close to the actual device design and a simple fine pattern PSM to resolve very high contrast images on a wafer. IDEAL can be applied to complicated two dimensional patterns for actual device such as double, rectangular or T-shaped gate patterns. Results of IDEAL on different pattern types are shown. IDEAL significantly reduces MEF (Mask Error enhancement Factor). At various rough and fine dose ratios, IDEAL demonstrates the advantage especially at fine linewidths below 150 nm where the MEF of single conventional exposures increase sharply. Our extensive calculation of MEF with various patterns and experiments on complicated two dimensional patterns further confirm that IDEAL is a practical method in advanced device manufacturing.

Paper Details

Date Published: 30 December 1999
PDF: 12 pages
Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); doi: 10.1117/12.373298
Show Author Affiliations
Masanobu Hasegawa, Canon Inc. (Japan)
Kenji Saitoh, Canon Inc. (Japan)
Minoru Yoshii, Canon Inc. (Japan)
Akiyoshi Suzuki, Canon Inc. (Japan)

Published in SPIE Proceedings Vol. 3873:
19th Annual Symposium on Photomask Technology
Frank E. Abboud; Brian J. Grenon, Editor(s)

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