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Proceedings Paper

Temperature dependence of quantum well infrared photodetector focal plane array characteristics
Author(s): Yoichiro Sakachi; Hironori Nishino; Prafulla J. Masalkar; Yoshihiro Miyamoto; Toshio Fujii
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Paper Abstract

We investigated the operation temperature dependence of the characteristics of quantum-well infrared photodetector focal plane arrays (QWIP-FPAs) for the 8 - 10 micrometer wavelength region from 65 K to 80 K. We found that a proposed simple circuit model explains the temperature dependence of the DC output and signal intensity of the QWIP-FPA. In this model, we used empirical current-voltage (I-V) characteristics of the QWIP, which was not hybridized with the readout integrated circuit (called 'QWIP itself'), measured at various temperatures and a simplified equivalent circuit model. The signal intensity of the QWIP-FPAs decreases as the temperature increases, while the photo-current of the QWIP itself increases slightly as the temperature increases. The difference between these behaviors is because the bias applied to QWIP in QWIP-FPA varies during the integration cycle and the bias applied to QWIP itself is constant. The noise equivalent temperature difference (NETD) increases from 0.10 K to 0.20 K as the operation temperature increases from 65 K to 80 K, since the signal intensity decreases and the shot noise increases with increasing the dark current.

Paper Details

Date Published: 28 December 1999
PDF: 7 pages
Proc. SPIE 3870, Sensors, Systems, and Next-Generation Satellites III, (28 December 1999); doi: 10.1117/12.373184
Show Author Affiliations
Yoichiro Sakachi, Fujitsu Labs. Ltd. (Japan)
Hironori Nishino, Fujitsu Labs. Ltd. (Japan)
Prafulla J. Masalkar, Fujitsu Labs. Ltd. (Japan)
Yoshihiro Miyamoto, Fujitsu Labs. Ltd. (Japan)
Toshio Fujii, Fujitsu Labs. Ltd. (Japan)

Published in SPIE Proceedings Vol. 3870:
Sensors, Systems, and Next-Generation Satellites III
Hiroyuki Fujisada; Joan B. Lurie, Editor(s)

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