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Proceedings Paper

1.9-GHz single balanced diode mixer fabricated on Al2O3 substrate by thin film technology
Author(s): Yen-Heng Lin; Yi-Jen Chan
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Paper Abstract

A passive balun using spiral inductors and inter-digital capacitors has been developed for a 1.9 GHz balanced diode mixer on Al2O3 substrates. Using this passive balun on the input port (RF port and LO port) of mixer circuit and incorporating the Schottky diode, where I-V model and small signal RF model have been established, a wideband signal balanced diode mixer was designed, fabricated and measured.

Paper Details

Date Published: 13 December 1999
PDF: 9 pages
Proc. SPIE 3861, Gigahertz Devices and Systems, (13 December 1999); doi: 10.1117/12.373013
Show Author Affiliations
Yen-Heng Lin, National Central Univ. (Taiwan)
Yi-Jen Chan, National Central Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3861:
Gigahertz Devices and Systems
Dwight C. Streit, Editor(s)

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