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Proceedings Paper

Linewidth enhancement factor in electroabsorption modulated lasers
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Paper Abstract

Semiconductor sources with integrated electroabsorption modulators and distributed feedback lasers (EML) are important for high speed (2.5 Gb/s and higher) transmission systems. These devices have very low spectral width under modulation which reduces the effect of fiber chromatic dispersion. The low spectral width is due to low linewidth enhancement factor ((alpha) -factor) of these devices. We report measurement of (alpha) as a function of bias for different EML devices. For EML devices with large isolation resistance between the laser and the modulator, (alpha) varies with the modulator voltage. For some bias level measured (alpha) is close to zero. The value of (alpha) has also been calculated using the band structure parameter of the active region. The measurement and calculation agree. For EML devices with low isolation resistance, the measured (alpha) is found to be nearly independent of modulator voltage. This is explained by considering the effect of leakage current between the laser and the modulator.

Paper Details

Date Published: 26 November 1999
PDF: 9 pages
Proc. SPIE 3847, Optical Devices for Fiber Communication, (26 November 1999); doi: 10.1117/12.371254
Show Author Affiliations
Niloy Choudhury, Univ. of Connecticut (United States)
Niloy K. Dutta, Univ. of Connecticut (United States)

Published in SPIE Proceedings Vol. 3847:
Optical Devices for Fiber Communication
Michel J. F. Digonnet, Editor(s)

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