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Proceedings Paper

High-power source and illumination system for extreme ultraviolet lithography
Author(s): Glenn D. Kubiak; Luis J. Bernardez II; Kevin D. Krenz; William C. Replogle; William C. Sweatt; Donald W. Sweeney; Russell M. Hudyma; Harry Shields
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Paper Abstract

A clean, high-power Extreme Ultraviolet (EUV) light source is being developed for Extreme Ultraviolet Lithography (EUVL). The source is based on a continuous jet of condensable gas irradiated with a diode-pumped solid state laser producing a time-averaged output power of 1700 W at 5000 - 6000 Hz. An illumination system is being assembled to collect and deliver the EUV output from the source and deliver it to a reticle and projection optics box to achieve an EUV exposure rate equivalent to ten 300-mm wafers per hour.

Paper Details

Date Published: 23 November 1999
PDF: 7 pages
Proc. SPIE 3767, EUV, X-Ray, and Neutron Optics and Sources, (23 November 1999); doi: 10.1117/12.371111
Show Author Affiliations
Glenn D. Kubiak, Sandia National Labs. (United States)
Luis J. Bernardez II, Sandia National Labs. (United States)
Kevin D. Krenz, Sandia National Labs. (United States)
William C. Replogle, Sandia National Labs. (United States)
William C. Sweatt, Sandia National Labs. (United States)
Donald W. Sweeney, Lawrence Livermore National Lab. (United States)
Russell M. Hudyma, Lawrence Livermore National Lab. (United States)
Harry Shields, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 3767:
EUV, X-Ray, and Neutron Optics and Sources
Carolyn A. MacDonald; Kenneth A. Goldberg; Juan R. Maldonado; Huaiyu Heather Chen-Mayer; Stephen P. Vernon, Editor(s)

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