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Proceedings Paper

Semiconductor detectors for the erytheme region of UV radiation
Author(s): V. P. Makhniy; Leonid P. Gal'chinetsky; Vladimir D. Ryzhikov
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Paper Abstract

Main parameters and characteristics of surface-barrier diodes sensitive for UV irradiation on the base of ZnSe are presented in the given paper. Possibilities of application of developed semiconductor photoreceivers for detectors of erytheme region are being discussed.

Paper Details

Date Published: 18 November 1999
PDF: 2 pages
Proc. SPIE 3904, Fourth International Conference on Correlation Optics, (18 November 1999); doi: 10.1117/12.370468
Show Author Affiliations
V. P. Makhniy, Chernivtsi State Univ. (Ukraine)
Leonid P. Gal'chinetsky, Institute for Monocrystals (Ukraine)
Vladimir D. Ryzhikov, Institute for Monocrystals (Ukraine)

Published in SPIE Proceedings Vol. 3904:
Fourth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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