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Proceedings Paper

Multifractal properties of polycrystalline gold films
Author(s): Peter E. Strizhak; Boris A. Snopok; Taras Melnik; Ekaterina V. Kostyukevich; Sergei I. Lysenko; Peter E. Shepeliavii; Sergei L. Priatkin; Sergey A. Kostyukevych; Yuri M. Shirshov; Evgenie F. Venger
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Paper Abstract

Multifractal analysis is performed for description of the surface topography of thin polycrystalline gold film. The film was obtained by thermal evaporation in vacuum. Its structure was modified by annealing at different temperatures in the range 20 - 200 degree(s)C. All films were imaged by Atomic Force Microscopy. Image was analyzed as a collection of layers taken parallel to the mean surface. Fractal subsets with different scaling properties were described by multifractal divergence (e.g. the difference between maximal and minimal values of the f((alpha) ) spectrum). This allowed us to highlight the effect of the temperature of film annealing on the surface structure. We found that fractal diversity jumps down in the temperature range 130 divided by 140 degree(s)C. Therefore, phase transition occurs in the system. Below the temperature of the phase transition the surface topography is characterized by high roughness and existence of small-scale irregularities. The melting also results in a decrease of the surface roughness due to the flowing down of gold crystallites. We also illustrate that surface transformation under low-temperature annealing changes the power spectral density and probability distribution of height functions.

Paper Details

Date Published: 18 November 1999
PDF: 12 pages
Proc. SPIE 3904, Fourth International Conference on Correlation Optics, (18 November 1999); doi: 10.1117/12.370427
Show Author Affiliations
Peter E. Strizhak, L.V. Pisarzhevskii Institute of Physical Chemistry (Ukraine)
Boris A. Snopok, Institute of Semiconductor Physics (Ukraine)
Taras Melnik, L.V. Pisarzhevskii Institute of Physical Chemistry (Ukraine)
Ekaterina V. Kostyukevich, Institute of Semiconductor Physics (Ukraine)
Sergei I. Lysenko, Institute of Semiconductor Physics (Ukraine)
Peter E. Shepeliavii, Institute of Semiconductor Physics (Ukraine)
Sergei L. Priatkin, Institute of Semiconductor Physics (Ukraine)
Sergey A. Kostyukevych, Institute of Semiconductor Physics (Ukraine)
Yuri M. Shirshov, Institute of Semiconductor Physics (Ukraine)
Evgenie F. Venger, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 3904:
Fourth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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