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Proceedings Paper

Electrodeposited polycrystalline GaAs films and their characteristics
Author(s): Chunhui Yang; Zhimei Zhang; Wusheng Xu; Aizhen Han
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Paper Abstract

The preparation of polycrystalline GaAs films by using electrodeposition technology is described. Influences of electrodeposition parameters on the quality of films were discussed, such as the current density, the relative concentration of ions, the value of pH of the electrolyte. On the basis of observing the micrographs, we have measured the chemical composition, microstructure and parameters of the energy band of the films. The result show that the composition of the films deposited is Ga0.9946 As1.0054, and the direct gap nature of the deposited material, its band gap is 1.40eV.

Paper Details

Date Published: 12 November 1999
PDF: 5 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370357
Show Author Affiliations
Chunhui Yang, Harbin Institute of Technology (China)
Zhimei Zhang, Harbin Institute of Technology (China)
Wusheng Xu, Harbin Institute of Technology (China)
Aizhen Han, Harbin Institute of Technology (China)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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