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Proceedings Paper

Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method
Author(s): Terence ChaiLeng Wee; Boon Siew Ooi; Yan Zhou; Yuen Chuen Chan; Yee Loy Lam
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Paper Abstract

SiO2 films prepared using sol-gel technique have found enormous potential applications in photonics, electronics and sensor devices. However, the feasibility of the devices utilizing sol-gel technology lies on the ease of the fabrication processes such as patterns transfer using wet or dry etchings. Dry etching is preferred over wet etching as it is able to produce finer features with high anisotropic etch profile. In this paper, we report the development of a dry reactive ion etching process for sol-gel SiO2 using a mixture of CF4 and O2 plasma. Parameters such as RF power, chamber pressure, CF4 and O2 flow rate, were optimized using a statistical method called Taguchi Technique. Etch rate of as high as 50nm/min, with high anisotropy etched profile, has been obtained.

Paper Details

Date Published: 12 November 1999
PDF: 7 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370344
Show Author Affiliations
Terence ChaiLeng Wee, Nanyang Technological Univ. (Singapore)
Boon Siew Ooi, Nanyang Technological Univ. (Singapore)
Yan Zhou, Nanyang Technological Univ. (Singapore)
Yuen Chuen Chan, Nanyang Technological Univ. (Singapore)
Yee Loy Lam, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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