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Proceedings Paper

Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 um
Author(s): HongKhai Khoo; Soo-Jin Chua
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Paper Abstract

0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP QW lasers emitting at 1.55 micrometers are studied theoretically. Independent of material system, large band discontinuity results in a large number of subbands and high density of states, which gives rise to lower optical gain and T0. Besides, the 3 dB bandwidth is increased and is more resilient to high temperature. InGaAs/InAlGaAs QW lasers can achieve threshold of 572 Acm-2, T0 of 45K and 3 dB bandwidth of 38 GHz at gain of 100 cm-1. InGaAs/InGaAsP QW lasers can only achieve 22 GHz. This suggests that the low conduction band offset ratio limits the bandwidth of InGaAs/InGaAsP QW lasers. InGaAs/InAlGaAs laser, on the other hand, could be designed to give low threshold, large bandwidth and high T0.

Paper Details

Date Published: 12 November 1999
PDF: 10 pages
Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); doi: 10.1117/12.370300
Show Author Affiliations
HongKhai Khoo, National Univ. of Singapore (Singapore)
Soo-Jin Chua, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 3896:
Design, Fabrication, and Characterization of Photonic Devices
Marek Osinski; Soo-Jin Chua; Shigefusa F. Chichibu, Editor(s)

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