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Proceedings Paper

Raman-excited spin coherences for high-temperature spectral hole burning memories
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Paper Abstract

The possibility of using Raman excited spin coherences to increase the operating temperature of spectral hole burning memories and processors is being explored experimentally. The approach is to store and/or process data using spin coherences excited by optical Raman transitions. This is motivated by the fact that spin coherence lifetimes are much less sensitive to temperature than optical coherence lifetimes. However, direct microwave excitation of spin coherences does not give a high storage density because of the large microwave wavelength. By using optical Raman fields to excite the spin coherences, full optical spatial resolution can be achieved. Initial experiments in Pr doped YSO demonstrated potential for higher temperature operation. Current experiments are concentrating on further increasing the operating temperature using this and other materials.

Paper Details

Date Published: 22 November 1999
PDF: 6 pages
Proc. SPIE 3802, Advanced Optical Data Storage: Materials, Systems, and Interfaces to Computers, (22 November 1999); doi: 10.1117/12.370236
Show Author Affiliations
Philip L. Hemmer, Air Force Research Lab. (United States)
M. Selim Shahriar, Massachusetts Institute of Technology (United States)
Byoung S. Ham, Massachusetts Institute of Technology (United States)
Myung K. Kim, Univ. of South Florida (United States)

Published in SPIE Proceedings Vol. 3802:
Advanced Optical Data Storage: Materials, Systems, and Interfaces to Computers
Pericles A. Mitkas; Zameer U. Hasan; Hans J. Coufal; Glenn T. Sincerbox, Editor(s)

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