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Proceedings Paper

Global simulation of 2.5-THz GaAs Schottky mixers and 140-GHz InP TEOs using a unique time-domain analysis
Author(s): Haoyue Wang; Stephen H. Jones; Gregory B. Tait; Chris M. Mann
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Paper Abstract

We describe a unique and powerful global time-domain simulation technique for terahertz diodes such as GaAs Schottky diode mixers, GaAs Schottky diode frequency multipliers, and InP Transferred Electron Oscillators (TEOs). 1D, finite difference, drift-diffusion nonlinear device simulation codes have been linked with a convolution- based circuit analysis. These simulators allow designers to observe both the transient and steady state time domain behavior of the nonlinear circuits. Since physical device simulators have been used, the spatial and temporal behavior of the electrons and electric field within the device under large signal drive can be observed. This gives great insight into the internal device physics at high frequencies. The mixer code allows for the direct and fully self-consistent calculation of the conversion loss and noise temperature; the TEO code allows for fully autonomous calculation of oscillator start-up and frequency selection. Simulation results for 2.5 THz GaAs Schottky mixers and 140 GHz InP TEOs are given.

Paper Details

Date Published: 12 November 1999
PDF: 12 pages
Proc. SPIE 3795, Terahertz and Gigahertz Photonics, (12 November 1999); doi: 10.1117/12.370146
Show Author Affiliations
Haoyue Wang, Univ. of Virginia (United States)
Stephen H. Jones, Univ. of Virginia (United States)
Gregory B. Tait, Virginia Commonwealth Univ. (United States)
Chris M. Mann, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 3795:
Terahertz and Gigahertz Photonics
R. Jennifer Hwu; Ke Wu, Editor(s)

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