Synchrotron radiation (SR) stimulated process, which has characteristics of high spatial resolution and low damage, is suitable for nano-processes. Si(111) surface after removal of native oxide by SR stimulated desorption was atomically flat with no damage. If the semiconductor surface is chemically modified and chemical bonds having a weak interaction with the substrate electronic states (a localized electronic state) are formed, for example, such as SiH₂ and SiH₃, they can be broken (etched) by the SR irradiations. Efficient site specific bone breaking, overwhelming the secondary electron effects, can be expected by a resonant excitations from a core electronic state to a dissociative valence electron state. The excitation energy and polarization tunability, which is unique characteristic of the SR process, will display its power in the nano-process applications which require the atom level control.

Date Published: 16 November 1999
PDF: 11 pages
Proc. SPIE 3773, X-Ray Optics Design, Performance, and Applications, (16 November 1999); doi: 10.1117/12.370106

Published in SPIE Proceedings Vol. 3773:
X-Ray Optics Design, Performance, and Applications
Ali M. Khounsary; Andreas K. Freund; Tetsuya Ishikawa; George Srajer; Jonathan C. Lang, Editor(s)