
Proceedings Paper
Stimulated emission from organic semiconductorFormat | Member Price | Non-Member Price |
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Paper Abstract
Optically pumped surface emitting and edge emitting stimulated emission behaviors in organic semiconductors was demonstrated in this study. For the surface emitting device, the microcavity was formed by sandwiching a polymer film containing PVK, Alq and DCM between a DBR with a reflectivity of 99.5 percent and a silver film. The sample was optically pumped by the three harmonic of a observed in DCM-doped PVK microcavity when pumped above the threshold intensity of 0.25MW/cm2. The full width at half maximum was 0.6 nm with the peak wavelength at 603nm. For the edge emitting device, a laser dye DCM doped Alq matrix wa used as the gain medium. The sample was transversely pumped by the three harmonic output of the mode-locked Nd:YAG laser. The change of the emission spectra showed a clear threshold action and gain narrowing phenomenon when increasing the excitation intensity. The spectra narrowing observe result from the amplified spontaneous emission in the gain material.
Paper Details
Date Published: 9 November 1999
PDF: 5 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369445
Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)
PDF: 5 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369445
Show Author Affiliations
Lijun Wang, Lab. of Excited State Processes (China)
Xingyuan Liu, Changchun Institute of Physics (China)
Yongqiang Ning, Changchun Institute of Physics (China)
Yun Liu, Changchun Institute of Physics (China)
Sheng Li Wu, Changchun Institute of Physics (China)
Dongjiang Wu, Changchun Institute of Physics (China)
Xingyuan Liu, Changchun Institute of Physics (China)
Yongqiang Ning, Changchun Institute of Physics (China)
Yun Liu, Changchun Institute of Physics (China)
Sheng Li Wu, Changchun Institute of Physics (China)
Dongjiang Wu, Changchun Institute of Physics (China)
Jiamin Zhao, Changchun Institute of Physics (China)
Changqin Jin, Changchun Institute of Physics (China)
Lixiang Wang, Changchun Institute of Applied Chemistry (China)
Xiabin Jing, Changchun Institute of Applied Chemistry (China)
Fosong Wang, Changchun Institute of Applied Chemistry (China)
Changqin Jin, Changchun Institute of Physics (China)
Lixiang Wang, Changchun Institute of Applied Chemistry (China)
Xiabin Jing, Changchun Institute of Applied Chemistry (China)
Fosong Wang, Changchun Institute of Applied Chemistry (China)
Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)
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