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Proceedings Paper

650-nm AlGaInP quantum well lasers for the application of DVD
Author(s): Lianhui Chen; Xiaoyu Ma; Liang Guo; Jun Ma; Hongyu Ding; Qing Cao; Liming Wang; Guangzhe Zhang; Yali Yang; Guohong Wang; Manqing Tan
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Paper Abstract

Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm2 respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, the samples of LD have been certified by PUH manufacturers.

Paper Details

Date Published: 9 November 1999
PDF: 7 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369422
Show Author Affiliations
Lianhui Chen, Institute of Semiconductors (China)
Xiaoyu Ma, Institute of Semiconductors (China)
Liang Guo, Institute of Semiconductors (China)
Jun Ma, Huayang Industrial Co. Ltd. (China)
Hongyu Ding, Huayang Industrial Co. Ltd. (China)
Qing Cao, Institute of Semiconductors (China)
Liming Wang, Institute of Semiconductors (China)
Guangzhe Zhang, Institute of Semiconductors (China)
Yali Yang, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Manqing Tan, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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