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Proceedings Paper

Normal-incident SiGe/Si MQW photodetectors operating at 1.3 um
Author(s): Buwen Cheng; Chengfang Li; Qingqing Yang; Hongjie Wang; Liping Luo; Jinzhong Yu; Qiming Wang
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Paper Abstract

A normal-incident SiGe/Si multiple quantum wells photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 micrometers wavelength. The quantum efficiency of the photodetector was 0.1 percent at 1.3 micrometers and 20 percent at 0.95 micrometers .

Paper Details

Date Published: 9 November 1999
PDF: 4 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369415
Show Author Affiliations
Buwen Cheng, Institute of Semiconductors (China)
Chengfang Li, Institute of Semiconductors (China)
Qingqing Yang, Institute of Semiconductors (China)
Hongjie Wang, Institute of Semiconductors (China)
Liping Luo, Institute of Semiconductors (China)
Jinzhong Yu, Institute of Semiconductors (China)
Qiming Wang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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