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Proceedings Paper

Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition
Author(s): Jingli Chen; Zhe Chuan Feng; X. Zhang; Soo-Jin Chua; Yong Tian Hou; Jianyi Lin
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Paper Abstract

GaN thin films, undoped, Si- and Mg-doped, and InGaN-GaN multiple quantum well (MQW) structures have been grown on Si substrates with specially designed composite intermediate layers consisting of a ultra-thin amorphous Si layer and a GaN/AlGaN multilayered buffer by low pressure metalorganic chemical vapor deposition. The structural and optical properties of these new grown material were studied. X-ray diffraction, Raman scattering and Fourier transform IR reflectance measurement confirmed their wurtzite structure. Scanning electron microscopy exhibited the single crystalline grain size up to approximately 2 micrometers . Photoluminescence showed strong GaN near edge emission, with only very weak deep defect-related emissions, for GaN films, and strong MQW emissions. The film surface morphology and material properties are improved by adjusting the growth conditions and buffer layer structural design.

Paper Details

Date Published: 9 November 1999
PDF: 9 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369404
Show Author Affiliations
Jingli Chen, National Univ. of Singapore (Singapore)
Zhe Chuan Feng, Institute of Materials and Research Engineering (Singapore)
X. Zhang, National Univ. of Singapore (Singapore)
Soo-Jin Chua, Institute of Materials and Research Engineering and National Univ. of Singapore (Singapore)
Yong Tian Hou, National Univ. of Singapore (Singapore)
Jianyi Lin, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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