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Proceedings Paper

InGaAlAs/InAlAs multiple quantum well structures grown by molecular beam epitaxy for long-wavelength infrared detection
Author(s): Dao Hua Zhang; W. M. Zhang; P. H. Zhang; T. Osotchan; Soon Fatt Yoon; Xu Shi; Rong Liu; Teng Soon Wee
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Paper Abstract

We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice- matched to InP, for the long wavelength IR detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental result are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.

Paper Details

Date Published: 9 November 1999
PDF: 8 pages
Proc. SPIE 3899, Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures, (9 November 1999); doi: 10.1117/12.369396
Show Author Affiliations
Dao Hua Zhang, Nanyang Technological Univ. (Singapore)
W. M. Zhang, Nanyang Technological Univ. (Singapore)
P. H. Zhang, Nanyang Technological Univ. (Singapore)
T. Osotchan, Nanyang Technological Univ. (Singapore)
Soon Fatt Yoon, Nanyang Technological Univ. (Singapore)
Xu Shi, Nanyang Technological Univ. (Singapore)
Rong Liu, National Univ. of Singapore (Singapore)
Teng Soon Wee, National Univ. of Singapore (Singapore)

Published in SPIE Proceedings Vol. 3899:
Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Seng Tiong Ho; Yan Zhou; Weng W. Chow; Yasuhiko Arakawa, Editor(s)

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