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Proceedings Paper

pH sensitivity and hysteresis of A-WO3 gate ISFET compared with different membranes
Author(s): Jung Lung Chiang; Jung Chuan Chou; Ying-Chung Chen
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Paper Abstract

Because of the pH sensitivity is one of the important characteristic parameters of ISFET devices. The response of ISFET is mainly determined with the type of the sensing membrane, therefore the sensing material plays a significant role. In addition, the hysteresis is the non-ideal and unstable factor of ISFET devices for measuring. Hence, in this study, the pH sensitivity and hysteresis of a-WO3 gate ISFET are investigated, and compare with different sensing membranes.

Paper Details

Date Published: 11 November 1999
PDF: 9 pages
Proc. SPIE 3897, Advanced Photonic Sensors and Applications, (11 November 1999); doi: 10.1117/12.369359
Show Author Affiliations
Jung Lung Chiang, National Sun Yat-Sen Univ. (Taiwan)
Jung Chuan Chou, National Yunlin Univ. of Science and Technology (Taiwan)
Ying-Chung Chen, National Sun Yat-Sen Univ. (Taiwan)

Published in SPIE Proceedings Vol. 3897:
Advanced Photonic Sensors and Applications
Robert A. Lieberman; Anand Krishna Asundi; Hiroshi Asanuma, Editor(s)

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