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Proceedings Paper

Modeling HEMT intermodulation distortion characteristics
Author(s): Guoli Qu; Anthony E. Parker
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Paper Abstract

The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, are shown to exhibited almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for successful circuit simulation.

Paper Details

Date Published: 8 October 1999
PDF: 7 pages
Proc. SPIE 3893, Design, Characterization, and Packaging for MEMS and Microelectronics, (8 October 1999); doi: 10.1117/12.368448
Show Author Affiliations
Guoli Qu, Macquarie Univ. (Australia)
Anthony E. Parker, Macquarie Univ. (Australia)

Published in SPIE Proceedings Vol. 3893:
Design, Characterization, and Packaging for MEMS and Microelectronics
Bernard Courtois; Serge N. Demidenko, Editor(s)

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