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Proceedings Paper

Electrochemical process of n-Si photonic structure formation
Author(s): Lyudmila A. Karachevtseva; Oleq A. Lytvynenko; Elza A. Malovichko
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Paper Abstract

Electrochemical process of the n-Si macroporous photonic structure formation has been investigated. The stationary distribution of the nonequilibrium hole concentration through the depth of n-Si plates after the intrinsic backside illumination was calculated. The light intensity and the electrical field regimes were determined for the macropore formation with the constant hole concentration on the tips. The stationary current regime is not equal to the electrochemical process stability. It was found that the stabilization of the hole concentration due to the light intensity change is more effective relatively the electrical field variation. The hole concentration stability and the cylindrical pore formation are possible for the high photosensitive samples only.

Paper Details

Date Published: 4 November 1999
PDF: 6 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368400
Show Author Affiliations
Lyudmila A. Karachevtseva, Institute of Semiconductor Physics (Ukraine)
Oleq A. Lytvynenko, Institute of Semiconductor Physics (Ukraine)
Elza A. Malovichko, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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