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Proceedings Paper

Transport properties of p-Hg1-xCdxTe (x = 0.22)
Author(s): Pavel Moravec; Roman Grill; Jan Franc; Pavel Hoeschl; Eduard Belas
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Paper Abstract

Measurements of the Hall coefficient and conductivity of not intentionally doped p-Hg1-xCdxTe samples at temperatures 4.2-300K are reported. A theoretical approximation of experimental data based on a solution of the electronic Boltzmann transport equation and subsequent fitting procedure is done giving a very good agreement between the experiment and calculation. The measurements are analyzed in the full temperature interval simultaneously using the same relevant model parameters in the doping, intrinsic and intermediate region as well. The three- acceptor-level model for one divalent acceptor and one monovalent residual acceptor is discussed. The precision of model parameters determined by this way is analyzed. A novel method to check the sample homogeneity is suggested.

Paper Details

Date Published: 4 November 1999
PDF: 8 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368373
Show Author Affiliations
Pavel Moravec, Charles Univ. (Czech Republic)
Roman Grill, Charles Univ. (Czech Republic)
Jan Franc, Charles Univ. (Czech Republic)
Pavel Hoeschl, Charles Univ. (Czech Republic)
Eduard Belas, Charles Univ. (Czech Republic)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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