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Proceedings Paper

Surface etch-front morphologies using in-plane light scattering
Author(s): Yiping -P. Zhao; G. -C. Wang; Toh-Ming Lu
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Paper Abstract

By using a diode array detector and an in-plane scattering geometry, we have investigated the diffraction from various etch-front morphologies. We can obtain an angular distribution of light intensity profile within 30 milliseconds. A series of experimental work, including the detailed characterization of Si backside surfaces and the morphology of Al films on Si during chemical corrosion, will be presented. The corresponding roughness parameters for different surfaces were extracted from light scattering profiles, and compared with those from real-space images. Real time measurements have been performed to study the evolution of Si surface morphology during wet chemical etching. RMS roughness, pits density, correlation length, and pits formation rate can be determined in real time.

Paper Details

Date Published: 25 October 1999
PDF: 11 pages
Proc. SPIE 3784, Rough Surface Scattering and Contamination, (25 October 1999); doi: 10.1117/12.366715
Show Author Affiliations
Yiping -P. Zhao, Rensselaer Polytechnic Institute (United States)
G. -C. Wang, Rensselaer Polytechnic Institute (United States)
Toh-Ming Lu, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 3784:
Rough Surface Scattering and Contamination
Zu-Han Gu; Philip T. C. Chen; Zu-Han Gu; Alexei A. Maradudin; Alexei A. Maradudin, Editor(s)

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