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Proceedings Paper

Surface barrier detectors made from ultrahigh-purity P-type silicon for - and x-ray spectroscopy
Author(s): Toufik Hadjersi; Hocine Cheraga; Wafia Chergui
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Paper Abstract

The technological process of fabrication of surface barrier silicon detectors by using ultra-high purity P-type silicon crystals with extra-high resistivity is described. An investigation on the reduction of the leakage current of this device type has been carried out. Indeed, several surface barrier silicon detectors have been realized and each of them has undergone a specific surface treatment. The best result has been obtained with K2Cr2O7- solution treatment.

Paper Details

Date Published: 19 October 1999
PDF: 5 pages
Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); doi: 10.1117/12.366618
Show Author Affiliations
Toufik Hadjersi, Haut Commissariat a la Recherche (Algeria)
Hocine Cheraga, Haut Commissariat a la Recherche (Algeria)
Wafia Chergui, Haut Commissariat a la Recherche (Algeria)

Published in SPIE Proceedings Vol. 3768:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics
Ralph B. James; Richard C. Schirato, Editor(s)

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