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Proceedings Paper

In-situ measurement of the channel stop structure in AXAF CCDs
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Paper Abstract

We present results from recent measurements of the channel stop structures in AXAF CCDs. We discuss refinements of a technique that uses a thin metal film with small, periodically spaced holes to restrict incident photons to well-defined regions of the pixel, providing a way to probe sub-pixel structure. By making monochromatic measurements at different energies, we can reliably determine the width and thickness of the channel stop pPLU-type silicon implant and its insulating oxide layer.

Paper Details

Date Published: 22 October 1999
PDF: 7 pages
Proc. SPIE 3765, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, (22 October 1999); doi: 10.1117/12.366509
Show Author Affiliations
Michael J. Pivovaroff, Massachusetts Institute of Technology (United States)
Steven E. Kissel, Massachusetts Institute of Technology (United States)
Gregory Y. Prigozhin, Massachusetts Institute of Technology (United States)
Mark W. Bautz, Massachusetts Institute of Technology (United States)
George R. Ricker Jr., Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3765:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X
Oswald H. W. Siegmund; Kathryn A. Flanagan, Editor(s)

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