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Proceedings Paper

Advanced rf CMOS technology
Author(s): Hiroshi Iwai; Tatsuya Ohguro; Eiji Morifuji; Takashi Yoshitomi; Hideki Kimijima; Hisayo S. Momose; Kazumi Inoh; Hideaki Nii; Yasuhiro Katsumata
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Paper Abstract

CMOS has been used for advanced LSIs so many years because of its excellent low-power and high-speed characteristics for highly-integrated digital circuits. For high frequency analog applications such as RF, it has not been used popularly because CMOS has been assumed to have poor capability compared with silicon bipolar and compound semiconductor devices. However, recent miniaturization of CMOS devices has significantly improved the CMOS RF characteristics. For example, typical values of fT and fmax for 0.25 micrometers n-MOSFETs already exceed 40 GHz, and those for 0.1 micrometers n-MOSFETs are more than 100 GHz. RF noise of the MOSFETs is also as god as less than 1 dB at 2 GHz operations. In this paper, CMOS technology for RF front- end circuit for mobile telecommunication devices is explained.

Paper Details

Date Published: 29 September 1999
PDF: 10 pages
Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); doi: 10.1117/12.364461
Show Author Affiliations
Hiroshi Iwai, Tokyo Institute of Technology (Japan)
Tatsuya Ohguro, Toshiba Corp. (Japan)
Eiji Morifuji, Toshiba Corp. (Japan)
Takashi Yoshitomi, Toshiba Corp. (Japan)
Hideki Kimijima, Toshiba Corp. (Japan)
Hisayo S. Momose, Toshiba Corp. (Japan)
Kazumi Inoh, Toshiba Corp. (Japan)
Hideaki Nii, Toshiba Corp. (Japan)
Yasuhiro Katsumata, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 3891:
Electronics and Structures for MEMS
Neil W. Bergmann; Olaf Reinhold; Norman C. Tien, Editor(s)

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