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Proceedings Paper

Semiconductor-polymer-based rf MEMS
Author(s): Vijay K. Varadan; Vasundara V. Varadan; K. A. Jose
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Paper Abstract

Semiconductor-polymer based sensors use silicon or compound semiconductors as inorganic parts with sensitive polymers as insulating, semiconducting or conductive materials. Organic thin film transistor has also been fabricated using this concept. These devices may allow control circuitry to be integrated with two and three dimensional MEMS. Interdigital type RF-MEMS can be designed and fabricated with Interdigital Electrodes (IDE) deposited on either polymer or an inorganic material such as Barium Strontium Titanate (BST). In the case of polymer based device, we study the capacitance change and calibrate it for desired sensing application. In the inorganic case, we make use of the change in dielectric properties of BST as a function of DC bias. IDE will act like a RF filter and oscillator just like the comb-type RF MEMS devices. These polymeric based devices can be integrated with organic thin film transistors.

Paper Details

Date Published: 29 September 1999
PDF: 10 pages
Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); doi: 10.1117/12.364448
Show Author Affiliations
Vijay K. Varadan, The Pennsylvania State Univ. (United States)
Vasundara V. Varadan, The Pennsylvania State Univ. (United States)
K. A. Jose, The Pennsylvania State Univ. (United States)

Published in SPIE Proceedings Vol. 3891:
Electronics and Structures for MEMS
Neil W. Bergmann; Olaf Reinhold; Norman C. Tien, Editor(s)

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