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Proceedings Paper

Silicon ultraviolet photodiode processing via integrated MOS capacitors
Author(s): Danilo Vrtacnik; Drago Resnik; Dejan Krizaj; Slavko Amon
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Paper Abstract

A conventional pn diffused junction silicon photodiode originally developed for visible and near infrared light was optimized for ultraviolet wavelength spectrum. Optimization was performed with numerical simulation tools and experimental work. The results of modeling and experiment are compared and discussed. MOS capacitor was integrated on active region of photodiode in order to control the quality of fabricated surface passivation layer. p+n junction structure and antireflective coating have been identified as two most important design and processing steps.

Paper Details

Date Published: 28 September 1999
PDF: 9 pages
Proc. SPIE 3818, Ultraviolet Atmospheric and Space Remote Sensing: Methods and Instrumentation II, (28 September 1999); doi: 10.1117/12.364155
Show Author Affiliations
Danilo Vrtacnik, Univ. of Ljubljana (Slovenia)
Drago Resnik, Univ. of Ljubljana (Slovenia)
Dejan Krizaj, Univ. of Ljubljana (Slovenia)
Slavko Amon, Univ. of Ljubljana (Slovenia)

Published in SPIE Proceedings Vol. 3818:
Ultraviolet Atmospheric and Space Remote Sensing: Methods and Instrumentation II
George R. Carruthers; Kenneth F. Dymond, Editor(s)

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