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Proceedings Paper

Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing
Author(s): Y. B. Jia; Ohm Guo Pan; Long-Ching Wang; Patrick Lo; Shih-Ked Lee; Jeong Yeol Choi; James Shih
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Paper Abstract

Ultra-thin gate oxides grown by rapid thermal processing in N2O-based oxidation ambients were evaluated. Gate oxide integrity was improved by incorporating more nitrogen in the thin gate oxides and by diluting oxidation ambients in inert gases.

Paper Details

Date Published: 27 August 1999
PDF: 4 pages
Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361349
Show Author Affiliations
Y. B. Jia, Integrated Device Technology (United States)
Ohm Guo Pan, Integrated Device Technology (United States)
Long-Ching Wang, Integrated Device Technology (United States)
Patrick Lo, Integrated Device Technology (United States)
Shih-Ked Lee, Integrated Device Technology (United States)
Jeong Yeol Choi, Integrated Device Technology (United States)
James Shih, Integrated Device Technology (United States)


Published in SPIE Proceedings Vol. 3884:
In-Line Methods and Monitors for Process and Yield Improvement
Sergio A. Ajuria; Jerome F. Jakubczak, Editor(s)

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