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Proceedings Paper

Ultrathin gate oxide degradation under different rates of charge injection
Author(s): Pitsini Mongkolkachit; Bharat L. Bhuva; Sharad Prasad; N. Bui; Sherra E. Kerns
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Paper Abstract

The quasi-static degradation will exhibit identical shifts in parameters for identical total charge injection irrespective of the rate of injection. For this paper, three different injection rates were used to inject same total charge in identical devices. Unequal shift in device parameters for each experiment indicates non-quasi-static nature of degradation. As a result, DC stressing experiments can not be used to accurately predict AC degradation. A novel method of accelerating the stress along frequency dimension is proposed and experimental results are presented. This method can predict AC degradation for any frequency using an empirical model.

Paper Details

Date Published: 27 August 1999
PDF: 6 pages
Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361348
Show Author Affiliations
Pitsini Mongkolkachit, Vanderbilt Univ. (United States)
Bharat L. Bhuva, Vanderbilt Univ. (United States)
Sharad Prasad, LSI Logic Corp. (United States)
N. Bui, Vantis (United States)
Sherra E. Kerns, Vanderbilt Univ. (United States)

Published in SPIE Proceedings Vol. 3884:
In-Line Methods and Monitors for Process and Yield Improvement
Sergio A. Ajuria; Jerome F. Jakubczak, Editor(s)

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