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Proceedings Paper

Online characterization of HSG polysilicon by AFM
Author(s): Larry M. Ge; M. A. el-Hamdi; Roger Alvis; S. Sawaya; David Gifford; Rafael Lainez; L. Hendrix
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Paper Abstract

Automated AFM (Atomic Force Microscope) has been used to characterize the structure of the HSG (hemi-spherical grain) polysilicon film. The structure characterization parameters such as the surface roughness, the grain size and density of the storage polysilicon were returned by AFM. In this paper we carried out designed experiments and characterized HSG samples with variant growth temperatures and doping densities. We compare the new AFM technique and the conventional optical reflectivity and SEM techniques. The results show that AFM data has a strong correlation with the electric response of the DRAM devices while the optical reflectivity and SEM measurements show weak or no correlation. Among the many data analysis performed by the AFM software, kurtosis and skewness were found to be valuable parameters for the optimization and control of both capacitance and ONO BV (breakdown voltage) of the DRAM devices.

Paper Details

Date Published: 27 August 1999
PDF: 4 pages
Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361340
Show Author Affiliations
Larry M. Ge, Digital Instruments/Veeco Metrology Group (United States)
M. A. el-Hamdi, Samsung Austin Semiconductor (United States)
Roger Alvis, Digital Instruments/Veeco Metrology Group (United States)
S. Sawaya, Samsung Austin Semiconductor (United States)
David Gifford, Samsung Austin Semiconductor (United States)
Rafael Lainez, Samsung Austin Semiconductor (United States)
L. Hendrix, Samsung Austin Semiconductor (United States)

Published in SPIE Proceedings Vol. 3884:
In-Line Methods and Monitors for Process and Yield Improvement
Sergio A. Ajuria; Jerome F. Jakubczak, Editor(s)

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