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Proceedings Paper

Plasma ashing using microwaves via slot antenna for 300-mm wafers
Author(s): Masaaki Furuya; Masaaki Kano; Fujio Terai; Katsuaki Aoki; Takeshi Yamauchi; Katsuya Yamada; Koichi Tamai; Hidehito Azumano
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Paper Abstract

We developed a downflow asher which incorporates a large-sized microwave excited plasma source with a slot antennas, for 300 mm wafers. An ashing rate of 4.5 micrometer/min and uniformity of plus or minus 5.1% were obtained at a wafer temperature of 250 degrees Celsius. The ashing rate was approximately fourfold and the uniformity level was similar to those obtained with conventional downflow asher. The newly developed asher incorporates: (1) a high-density plasma source with slot antennas, (2) a processing chamber the shape of which is optimized by gas flow simulations and (3) a compact, high- speed wafer transportation system with an originally developed vacuum robot which is primarily responsible for the high ashing rate. The maximum overall throughput, including that of the transportation system, is 160 wafers/h. Application of this system to the ashing of 300 mm wafers is expected.

Paper Details

Date Published: 3 September 1999
PDF: 8 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361315
Show Author Affiliations
Masaaki Furuya, Toshiba Corp. (Japan)
Masaaki Kano, Toshiba Corp. (Japan)
Fujio Terai, Toshiba Corp. (Japan)
Katsuaki Aoki, Toshiba Corp. (Japan)
Takeshi Yamauchi, Toshiba Corp. (Japan)
Katsuya Yamada, Toshiba Corp. (Japan)
Koichi Tamai, Toshiba Corp. (Japan)
Hidehito Azumano, Shibaura Mechatronics Corp. (Japan)

Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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