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Proceedings Paper

High-density plasma deposition manufacturing productivity improvement
Author(s): Leonard J. Olmer; Chris P. Hudson
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Paper Abstract

High Density Plasma (HDP) deposition provides a means to deposit high quality dielectrics meeting submicron gap fill requirements. But, compared to traditional PECVD processing, HDP is relatively expensive due to the higher capital cost of the equipment. In order to keep processing costs low, it became necessary to maximize the wafer throughput of HDP processing without degrading the film properties. The approach taken was to optimize the post deposition microwave in-situ clean efficiency. A regression model, based on actual data, indicated that number of wafers processed before a chamber clean was the dominant factor. Furthermore, a design change in the ceramic hardware, surrounding the electrostatic chuck, provided thermal isolation resulting in an enhanced clean rate of the chamber process kit. An infra-red detector located in the chamber exhaust line provided a means to endpoint the clean and in-film particle data confirmed the infra-red results. The combination of increased chamber clean frequency, optimized clean time and improved process.

Paper Details

Date Published: 3 September 1999
PDF: 5 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361312
Show Author Affiliations
Leonard J. Olmer, Lucent Technologies/Bell Labs. (United States)
Chris P. Hudson, Lucent Technologies/Bell Labs. (United States)

Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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