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Proceedings Paper

I-V characteristics of K(Ta0.65Nb0.35)O3 thin film prepared by pulsed laser
Author(s): Duanming Zhang; Weidong Ma; Xiaodong Wang; Zhongjun Chen; Desheng Xu; Ping Zheng; Mintao Huang; Meijun Zhang; Zhihua Li
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Paper Abstract

The I-V characteristics of K(Ta0.65Nb0.35)O3 thin films being prepared by PLD method on Si(100) were found to be Ohmic at low fields and space-charge-limited at higher fields, and this phenomena was correctly explained by SCLC theory.

Paper Details

Date Published: 8 September 1999
PDF: 2 pages
Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); doi: 10.1117/12.361121
Show Author Affiliations
Duanming Zhang, Huazhong Univ. of Science and Technology (China)
Weidong Ma, Huazhong Univ. of Science and Technology (China)
Xiaodong Wang, Huazhong Univ. of Science and Technology (China)
Zhongjun Chen, Huazhong Univ. of Science and Technology (China)
Desheng Xu, Huazhong Univ. of Science and Technology (China)
Ping Zheng, Hubei College of Education (China)
Mintao Huang, Huazhong Univ. of Science and Technology (China)
Meijun Zhang, Huazhong Univ. of Science and Technology (China)
Zhihua Li, Huazhong Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 3862:
1999 International Conference on Industrial Lasers
Fuxi Gan; Horst Weber; Zaiguang Li; Qingming Chen, Editor(s)

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