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Proceedings Paper

Cyclotron resonance light holes amplification in optically pumped semiconductors
Author(s): Dmitry B. Veksler; Andrei V. Muravjov; Valery N. Shastin
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Paper Abstract

Effect of amplification of far-IR radiation on light hole cyclotron resonance in Ge and InSb under the optical pumping by CO2 laser radiation has been calculated using the quantum mechanical model of valence band states in strong magnetic field. The model is based on 6 by 6 Luttinger Hamiltonian for valence band including split-off hole subband. We have found strong resonant dependence of pumping efficiency on magnetic field that is explained by quantum resonance of intersubband absorption of CO2 laser radiation. It was shown that at the optimal magnetic fields the cross-section of the gain can reach 2 X 10-14 cm2 for pumping power density 2 divided by 4 MW/cm2.

Paper Details

Date Published: 9 September 1999
PDF: 7 pages
Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361047
Show Author Affiliations
Dmitry B. Veksler, Institute for Physics of Microstructures (Russia)
Andrei V. Muravjov, Institute for Physics of Microstructures (Russia)
Valery N. Shastin, Institute for Physics of Microstructures (Russia)

Published in SPIE Proceedings Vol. 3828:
Terahertz Spectroscopy and Applications II
J. Martyn Chamberlain, Editor(s)

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